A 35mm 13.89 Million Pixel CMOS Active Pixel Image Sensor
نویسندگان
چکیده
This paper discusses a 13.89 million pixels CMOS image sensor for digital SLR cameras. The pitch of the 3transistor active pixel is 8 microns. The sensor has a full well charge of 117K electrons and 33 electrons temporal noise, and a dynamic range of 71 dB. The fixed pattern noise is 0.14% RMS, obtained by an on-chip correction circuit. Color filters have been optimized for best photographic performance. The pixel array area is equal to the size of 35 mm film (36 x 24 mm). Essentially, this means that the photographer gets the same image with the digital camera as with film, without lens magnification factor. Two technological challenges have to be overcome to make a sensor of this size. The sensor size exceeds the field area of steppers used to fabricate sub-micron CMOS chips. To solve this, a stitching technique has to be applied during processing of this device. A second problem of such large devices is the variation of the angle-of-incidence of the light on the silicon, causing the efficiency of micro lenses to vary along the focal plane. To avoid this problem, a pixel design with an inherently high fill factor is used. The product of fill fact or and quantum efficiency on this pixel is 30%, a number that cannot be further increased by the use of micro lenses.
منابع مشابه
A CMOS image sensor with light-controlled oscillating pixels for an investigative optobionic retinal prosthesis system
This paper presents a high-dynamic range CMOS image sensor architecture incorporating lightcontrolled oscillating pixels which can act as front-end for an investigative optobionic retinal prosthesis research effort. Each pixel acts as an independent oscillator, whose frequency is proportional to the local light intensity. A 9 9 pixel array has been fabricated in the AMS 0:35mm CMOS opto process...
متن کاملNew Method for Analysis of image sensor to produce and evaluate the image
In this paper, a new method for evaluating CMOS image sensors based on computer modeling and analysis is introduced. Image sensors are composed of different parts, each of which has a specific effect on image quality. Circuits of image sensors can be evaluated and analyzed using circuit simulators or theoretically, but these methods cannot help to produce the final image. In order to produce th...
متن کاملLineup for Camera Modules in Mobile Devices from Imageprocessing Solution LSI "Milbeaut" M-4MO(MB91688)/MC-3(MB91685)
Products from the Milbeaut Series for cellular phone cameras. These products integrate an image engine that processes high-resolution, high-speed, and small CMOS image sensor images beautifully and at high speed with low power consumption processes utilizing 90nm CMOS technology. We have developed highperformance M-4MO that is capable of processing up to 5 million pixels and MC-3 that can help ...
متن کاملCMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems
A new CMOS-based image sensor that is intrinsically compatible with onchip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 pm p-well CMOS process, and consists of a 128 x 128 array of 40 pm x 40 pm pixels. The CMOS image sensor technology ena...
متن کاملEfficient Pixel Architecture of CMOS Image Sensor using CMOS 180 nm technology
This paper describes CMOS Active Pixel Sensor (APS) that has huge demand in imaging systems. The pixel architecture consists of number of NMOS transistors and reverse biased p-n junction diode act as photo sensing element designed in 0.18um CMOS technology. The (64 H X64 V ) pixel array have presented and described. The sensor design contains 5T pixel architecture to investigate the effects by ...
متن کامل